https://doi.org/10.1140/epjd/s10053-023-00746-x
Regular Article – Atomic and Molecular Collisions
Scattering of e
by silicon atoms and transport coefficients in mixtures of inert gas with silicon vapor
1
Department of Physics, Pabna University of Science and Technology, 6600, Pabna, Bangladesh
2
Dagestan State University, 367000, Makhachkala, Russia
3
Gustav Gerster GmbH & Co. KG, 88400, Biberach, Germany
4
Division of Radiation Protection and Safety Control, Cyclotron and Radioisotope Center, Tohoku University, 6-3 Aoba, Aramaki, 980-8578, Aoba, Sendai, Japan
5
Department of Physics, University of Rajshahi, 6205, Rajshahi, Bangladesh
d shorifuddoza@pust.ac.bd, shorifuddoza@gmail.com
Received:
7
June
2023
Accepted:
11
August
2023
Published online:
26
September
2023
This work reports on the differential and various angle integrated cross sections for the scattering of electrons and positrons by silicon atoms. Moreover, the Sherman function 
and two other spin asymmetry parameters 
and 
have been calculated. Critical minima in the elastic differential cross sections and maximum spin polarization points were identified for this element. Dirac partial wave method with a complex optical model potential is used to carry out these investigations. Transport characteristics of electrons in silicon vapors and mixtures of inert gases (helium, argon) with silicon vapor were calculated using the Monte Carlo method. For electric field strengths ranging from 1 to 100 Td, drift velocity, average electron energy, diffusion and mobility coefficients, and electron energy distribution function are studied. We have shown that impurities of silicon vapor significantly affect electron transport in noble gases.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
