https://doi.org/10.1140/epjd/s10053-023-00752-z
Regular Article – Atomic Physics
Theoretical study of dielectronic recombination and electron-impact excitation for helium-like isoelectronic sequence
Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, 730070, Lanzhou, People’s Republic of China
b
xiely@nwnu.edu.cn
d
dongcz@nwnu.edu.cn
Received:
1
April
2023
Accepted:
29
August
2023
Published online:
28
September
2023
The cross sections and rate coefficients for dielectronic recombination (DR) and electron-impact excitation processes of helium-like isoelectronic sequence are systematically investigated using the relativistic distorted-wave approach. The detailed DR resonance energies, resonance strengths, cross sections, and plasma rate coefficients are presented for the twelve abundant astrophysical elements including C4+, O6+, Ne8+, Mg10+, Si12+, S14+, Ar16+, Ca18+, Ti20+, Cr22+, Fe24+, and Ni26+ ions, encompassing the DR processes due to K-shell 1s → 2l (∆n = 1), 1s → 3l (∆n = 2), and 1s → 4l (∆n = 3) excitations. The theoretical results are compared with the existing experimental measurements, excellent agreements are obtained. With the same approach, the direct and resonant electron-impact excitation cross sections associated with 1s → nl core excitations are also calculated for the helium-like C4+ to Ni26+ ions mentioned above. It is found that the resonant contribution is significant. The present results are suitable for modeling of astrophysical and fusion plasma.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
