Light drag via electron tunneling and incoherent pumping in semiconductor three-level InAs/GaAs double quantum dot molecules
Department of Electrical Engineering, Azarshahr Branch, Islamic Azad University, Azarshahr, Iran
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Received in final form: 4 November 2019
Published online: 12 December 2019
We theoretically investigate the lateral and rotary light-drag in semiconductor three-level InAs/GaAs double quantum dot molecules. No coherent laser fields are used and the coherence is created by interdot electron tunneling. The effect of interdot electron tunneling on lateral and rotary light-drag is discussed. Moreover, it is shown that applying an incoherent pumping field to the probe transition changes the subluminal to superluminal condition. It is observed that the light polarization state drags opposite and along with the medium motion in superluminal and subluminal propagating regions, respectively.
Key words: Optical Phenomena and Photonics
© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2019