https://doi.org/10.1140/epjd/e2017-80104-0
Regular Article
Formation of phase soliton complexes in an optically injected semiconductor laser*
1 Université de Lille, CNRS UMR 8523, Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), 59000 Lille, France
2 Université Côte d’Azur, CNRS, Institut de Physique de Nice, 1361 Route des Lucioles, 06560 Valbonne, France
3 Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
4 Istituto di Fotonica e Nanotecnologie del CNR, 70126 Bari, Italy
5 Dipartimento di Fisica Interateneo, Università e Politecnico di Bari, Via Amendola 173, 70123 Bari, Italy
6 Dipartimento di Scienza e Alta Tecnologia, Università dell’Insubria, Via Valleggio 11, 22100 Como, Italy
7 CNISM, Research Unit of Como, Via Valleggio 11, 22100 Como, Italy
a
e-mail: giovanna.tissoni@inln.cnrs.fr
Received: 14 February 2017
Received in final form: 4 April 2017
Published online: 15 June 2017
We show experimental and numerical results about attractive interactions between phase solitons in a strongly multimode semiconductor laser with injected signal. The formation of soliton bound states, or phase solitons with multiple chiral charge, is demonstrated and analyzed in terms of the (spatio-temporally resolved) phase dynamics of the system. Propagation velocity of phase solitons in the longitudinal cavity is studied, and a correlation is established with phase soliton size and total charge.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2017