Precision calculation of energy levels for four-valent Si I

Raykhan T. Imanbaeva; Mikhail G. Kozlov; Elena A. Konovalova

doi:10.1140/epjd/e2017-70718-5

EPJ

Precision calculation of energy levels for four-valent Si I^*

Raykhan T. Imanbaeva¹^,2^a, Mikhail G. Kozlov¹^,2 and Elena A. Konovalova¹

¹ Petersburg Nuclear Physics Institute, 1, Orlova roscha mcr., Gatchina, Leningrad region, 188300, Russia
² St. Petersburg Electrotechnical University “LETI”, Prof. Popov Str. 5, St. Petersburg 197376, Russia

Received: 15 November 2016
Received in final form: 12 February 2017
Published online: 23 May 2017

Abstract

We report the results of our calculation of low-lying levels of neutral Si using a combination of the configuration interaction and many-body perturbation theory (CI+MBPT method). We treat Si I as an atom with four valence electrons, and use two different starting approximations, namely V^N−2 and V^N−4. We conclude that both approximations provide comparable accuracy, on the level of 1%.

Contribution to the Topical Issue “Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces”, edited by A.N. Grum-Grzhimailo, E.V. Gryzlova, Yu V. Popov, and A.V. Solov’yov.

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EPJ

Precision calculation of energy levels for four-valent Si I*

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Precision calculation of energy levels for four-valent Si I^*