https://doi.org/10.1140/epjd/e2008-00198-7
Third harmonic enhancement due to Fano interference in semiconductor quantum well
1
College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P.R. China
2
State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, P.R. China
3
School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710062, P.R. China
Corresponding authors: a jlsiom@siom.ac.cn - b niuyp@siom.ac.cn - c sqgong@mail.siom.ac.cn
Received:
8
July
2008
Published online:
22
October
2008
We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.
PACS: 78.66.Fd – III-V semiconductors / 42.65.-k – Nonlinear optics / 79.60.Jv – Interfaces; heterostructures; nanostructures
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008