https://doi.org/10.1140/epjd/e2005-00154-1
Low energy cluster beam deposited BN films as the cascade for field emission
National laboratory of Solid State Microstructures, Department of Physics,
Nanjing University, Nanjing 210093, P.R. China
Corresponding author: a Jackkiesong@vip.sina.com
Received:
6
September
2004
Published online:
13
July
2005
The atomic deposited BN films with the thickness of nanometers (ABN) were
prepared by radio frequency magnetron sputtering method and the
nanostructured BN films (CBN) were prepared by Low Energy Cluster Beam
Deposition. UV-Vis Absorption measurement proves the band gap of 4.27 eV and
field emission of the BN films were carried out. F-N plots of all the
samples give a good fitting and demonstrate the F-N tunneling of the
emission process. The emission of ABN begins at the electric field of 14.6 V/
m while that of CBN starts at 5.10 V/m. Emission current
density of 1 mA/cm2 for ABN needs the field of 20 V/m while that of
CBN needs only 12.1 V/m. The cluster-deposited BN on n-type Silicon
substrate proves a good performance in terms of the lower gauge voltage,
more emission sites and higher electron intensity and seems a promising
substitute for the cascade of field emission.
PACS: 36.40.Cg – Electronic and magnetic properties of clusters / 61.46.+w – Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals / 85.45.Fd – Field emission displays (FEDs)
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005
