Scanning tunneling lithography of silicon nanoparticle films
Department of Physics and Astronomy, University of
Hawaii at Manoa, 2505 Correa Road, Honolulu, HI 96822, USA
Corresponding author: a firstname.lastname@example.org
Published online: 3 July 2003
Monolayer and bi-layer silicon nanoparticle (SiNP) films with wide band gaps (up to 4 eV) have been produced in UHV with narrow size distributions of particles with 2–4 nm diameters and were studied using scanning tunneling microscopy (STM) and spectroscopy (STS). The films then were manipulated by applying different values for the tunneling resistance. Nanoparticle fusion and fission processes allow to shape the particles in the films in various ways and to write in white and black on the film template.
PACS: 81.16.Nd – Nanolithography / 36.40.-c – Atomic and molecular clusters / 81.16.Ta – Atom manipulation / 73.22.-f – Electronic structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003