Injection locking properties of a microchip laser
Nuclear Physics Institute, Moscow State University, 119899 Moscow, Russia
2 Laboratoire d'Optronique associé au Centre National de la Recherche Scientifique (URA 6082) , École Nationale des Sciences Appliquées et de Technologies, 6 rue de Kérampont, 22305 Lannion, France
Accepted: 21 August 1998
Published online: 15 January 1999
An injected microchip laser is theoretically studied, with the use of two models: in the first model, which is traditional, the field is represented by a single frequency component in the slowly-varying envelope approximation. In the second model, referred to as the Fabry-Perot model, two field components are considered which are respectively centered around the frequency of an eigenmode of the injected laser and the frequency of the injected field. Computation of locking ranges, bistability do mains are performed and the results compared. They show not only an improved precision of the second model but also a necessity to use it to describe some effects such as the bistable domains in the limits of the locking domains.
PACS: 42.55.Ah – General laser theory / 42.55.Rz – Doped-insulator lasers and other solid state lasers
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999