Eur. Phys. J. D (2014) 68: 268
https://doi.org/10.1140/epjd/e2014-50229-9

Regular Article

Radiation emission by electrons channeling in bent silicon crystals

¹ St. Petersburg State Polytechnical University, Politechnicheskaya 29, 195251 St. Petersburg, Russia
² Department of Physics, Goethe University, Max-von-Laue-Str. 1, 60438 Frankfurt am Main, Germany
³ St. Petersburg State Maritime University, Leninsky Ave. 101, 198262 St. Petersburg, Russia

^a e-mail: ivanov@physics.spbstu.ru

Received: 20 March 2014
Received in final form: 6 June 2014
Published online: 25 September 2014

Abstract

Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystals. The projectile trajectories are computed using the newly developed module [G.B. Sushko, V.G. Bezchastnov, I.A. Solov’yov, A.V. Korol, W. Greiner, A.V. Solov’yov, J. Comput. Phys. 252, 404 (2013)] of the MBN Explorer package^b [I.A. Solov’yov, A.V. Yakubovich, P.V. Nikolaev, I. Volkovets, A.V. Solov’yov, J. Comput. Chem. 33, 2412 (2013)]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.