Monte Carlo simulations of electron channeling a bent (110) channel in silicon
Autogenstraße 11, 65933 Frankfurt am Main, Germany
Received: 16 March 2012
Received in final form: 18 March 2013
Published online: 16 May 2013
Results obtained with a new Monte Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied.
Key words: Atomic and Molecular Collisions
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag 2013