Eur. Phys. J. D (2013) 67: 108
https://doi.org/10.1140/epjd/e2013-30181-0

Regular Article

Monte Carlo simulations of electron channeling a bent (110) channel in silicon

Autogenstraße 11, 65933 Frankfurt am Main, Germany

^a e-mail: kostyuk@fias.uni-frankfurt.de

Received: 16 March 2012
Received in final form: 18 March 2013
Published online: 16 May 2013

Abstract

Results obtained with a new Monte Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied.