https://doi.org/10.1140/epjd/s10053-022-00497-1
Regular Article - Clusters and Nanostructures
Strain engineering of undoped and Na-doped 1D Cd8O8 nanowires
1
Xinjiang Key Laboratory of Solid State Physics and Devices, 830046, Urumqi, People’s Republic of China
2
College of Physics Science and Technology, Xinjiang University, 830046, Urumqi, People’s Republic of China
3
School of Physics and Electronics, Central South University, 410083, Changsha, People’s Republic of China
Received:
27
February
2022
Accepted:
8
September
2022
Published online:
26
September
2022
Based on first principles calculations, the basic properties and stability of Cd8O8 columnar nanowires and Na-doped Cd8O8 nanowires are studied, along with their electronic properties under strain control. The results indicate that the Cd8O8 nanowires exhibit characteristics of direct gap semiconductors, while the doped nanowires are metallic. It is also shown that both compressive strain and tensile strain increase the band gap of semiconductor nanowires. The effect of compressive strain on the work function of metal nanowires decreases linearly with the increase in strain, and the work function increases proportional to the tensile strain. These results can be expected to have potential applications in optoelectronic devices.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
