Regular Article

Electromagnetically induced transparency in a GaAs/InAs/GaAs quantum well in the influence of laser field intensity

¹ P.G. and Research Department of Physics, Government Arts College, Melur, Madurai 625 106, India
² Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701, South Korea

^a e-mail: a.john.peter@gmail.com
^b e-mail: cwlee@khu.ac.kr

Received: 1 June 2018
Received in final form: 8 September 2018
Published online: 26 March 2019

Abstract

Effects of laser field on electromagnetically induced transparency is investigated in a GaAs/InAs/GaAs quantum well. The taken system is InAs sandwiched between GaAs semiconducting materials. The confinement potential and the well size of the quantum well are kept constant. The three atomic sub-levels are considered and the system is considered using a density matrix approach. Laser field induced intersubband electromagnetically induced transparency in the three level single quantum well is discussed theoretically. Laser field related optical susceptibilities, Rabi frequency and the detuning parameters are computed in the present work. The variation of real and imaginary parts of optical susceptibility as a function of normalized detuning, in the influence of laser field, is obtained. The refractive index and the group velocity of the probe light pulse are found in the presence of laser field intensity. The variation of group index as a function of probe field energy, with the application of laser field, is reported. For the five units of laser parameter, the reduction of Δ_p∕Ω_c value is found to be 0.0762. The laser field dependence on the optical susceptibilities on the normalized detuning, refractive index and the group index is brought out.