Eur. Phys. J. D (2017) 71: 238
https://doi.org/10.1140/epjd/e2017-80418-9

Regular Article

Phase-sensitive Kerr nonlinearity in a three-level n-doped semiconductor quantum well (SQW)

Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran

^a e-mail: sahrai@tabrizu.ac.ir

Received: 18 June 2017
Received in final form: 9 July 2017
Published online: 12 September 2017

Abstract

A three-level n-doped semiconductor quantum well (SQW) based on phase-sensitive Kerr nonlinearity is proposed. The effect of phase difference between applied fields on linear and nonlinear dispersion and absorption is then discussed. It is found that by proper selection of the relative phase of applied fields, the linear and nonlinear absorption converts to linear and nonlinear gain, and simultaneously the Kerr nonlinearity enhances dramatically. Also the impacts of coupling fields intensity on linear and nonlinear absorption and dispersion are discussed.