Eur. Phys. J. D (2016) 70: 165
https://doi.org/10.1140/epjd/e2016-70191-8

Regular Article

Laser field induced optical gain in a group III-V quantum wire

¹ Research Scholar, R&D Centre, Bharathiar University, 641046 Coimbatore, India
² Deptment of Physics, GTN Arts College, 624005 Dindigul, India
³ P.G & Research Dept. of Physics, Government Arts College, 625106 Melur, Madurai, India
⁴ Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, 446-701 Gyeonggi, South Korea

^a e-mail: a.john.peter@gmail.com

Received: 14 March 2016
Received in final form: 11 June 2016
Published online: 30 August 2016

Abstract

Effect of intense high frequency laser field on the electronic and optical properties of heavy hole exciton in an InAsP/InP quantum well wire is investigated taking into consideration of the spatial confinement. Laser field induced exciton binding energies, optical band gap, oscillator strength and the optical gain in the InAs_0.8P_0.2/InP quantum well wire are studied. The variational formulism is applied to find the respective energies. The laser field induced optical properties are studied. The optical gain as a function of photon energy, in the InAs_0.8P_0.2/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The results show that the 1.55 μm wavelength for the fibre optic telecommunication applications is achieved for 45 Å wire radius in the absence of laser field intensity whereas the 1.55 μm wavelength is obtained for 40 Å if the amplitude of the laser field amplitude parameter is 50 Å. The characterizing wavelength for telecommunication network is optimized when the intense laser field is applied for the system. It is hoped that the obtained optical gain in the group III-V narrow quantum wire can be applied for fabricating laser sources for achieving the preferred telecommunication wavelength.