Modification of thin films induced by slow heavy ions analysed with PIXE and SRIM

Małgorzata Antoszewska-Moneta; Romuald Brzozowski; Marek Moneta

doi:10.1140/epjd/e2015-50629-3

2022 Impact factor 1.8

Atomic, Molecular, Optical and Plasma Physics

Topical Issue: Elementary Processes with Atoms and Molecules in Isolated and Aggregated States. Guest editors: Friedrich Aumayr, Bratislav Marinkovic, Štefan Matejčík, John Tanis, Kurt H. Becker

Open Access

Eur. Phys. J. D (2015) 69: 77
https://doi.org/10.1140/epjd/e2015-50629-3

Regular Article

Modification of thin films induced by slow heavy ions analysed with PIXE and SRIM^*

Małgorzata Antoszewska-Moneta^a, Romuald Brzozowski and Marek Moneta

Uniwersytet Łódzki, Wydział Fizyki i Informatyki Stosowanej, Pomorska 149, 90-236 Łódź, Poland

^a e-mail: m_ateno@interia.pl

Received: 27 August 2014
Received in final form: 7 December 2014
Published online: 17 March 2015

Abstract

In the present work the particle induced X-rays (PIXE) emitted during interaction of inert and active slow heavy (HI) ions with specially prepared thin films were measured. Kinematics of the interaction was simulated numerically with SRIM in grazing incident-exit angle geometry and in time sequence in order to determine dynamics of formation of the subsurface region damaged through implantation, sputtering and interface mixing. It was shown that the structure and composition of films and surfaces are not stable against HI irradiation due to preferential sputtering and implantation of ions and recoils and that dynamics of such a modification can be in-situ monitored with PIXE and analyzed with SRIM.

Contribution to the Topical Issue “Elementary Processes with Atoms and Molecules in Isolated and Aggregated States”, edited by Friedrich Aumayr, Bratislav Marinkovic, Stefan Matejcik, John Tanis and Kurt H. Becker.

© The Author(s) 2015. This article is published with open access at Springerlink.com

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