https://doi.org/10.1140/epjd/e2012-30484-6
Regular Article
Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr5Ni5Nb5 clusters*
1 Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan
2 Research Institute for Electromagnetic Materials, 982-0807 Sendai, Japan
3 Institute for Nanoscience and Nanotechnology, Waseda University, Waseda Tsurumaki, Shinjuku, 162-0041 Tokyo, Japan
a
e-mail: fukuhara@cd.wakwak.com
Received: 2 August 2012
Received in final form: 20 December 2012
Published online: 7 March 2013
The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40)100−xHx (0 < x < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-Vg-B characteristics of the (Ni0.36Nb0.4Zr0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag 2013