https://doi.org/10.1140/epjd/e2012-20470-5
Regular Article
Investigation of the SiC thin films synthetized by Thermionic Vacuum Arc method (TVA)
1 Department of Physics, Ovidius University, 900527 Constanta, Romania
2 National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG-36, 077125 Bucharest, Romania
a
e-mail: rvladoiu@univ-ovidius.ro
Received: 10 August 2011
Received in final form: 16 January 2012
Published online: 26 April 2012
Thermionic Vacuum Arc method (TVA) was used for the first time to prepare SiC thin films. This method is very suitable for deposition of high purity thin films with compact structure and extremely smooth in vacuum conditions. The nanocomposites were investigated using Transmission Electron Microscopy (TEM) analyses provided with HR-TEM and SAED facilities. The structure of the films can be indexed as following three forms: cubic structure of SiC (F4-3m) a = 0.4348 nm, cubic Si (Fd3m) a = 0.54307 nm and graphite (P63/mmc) a = 0.2456 nm; c = 0.6696 nm. The morphology, topography, wettability and wear properties were also performed by SEE system and by Raman Spectroscopy, increasing the interest for emerging applications.
Key words: Plasma Physics
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag 2012
