Eur. Phys. J. D (2012) 66: 71
https://doi.org/10.1140/epjd/e2012-20610-y

Regular Article

Experimental g factor of hydrogenlike silicon-28

¹ Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117 Heidelberg, Germany
² Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz, Germany
³ GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany

^a Present address: Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, Felix-Hausdorff-Str. 6, 17487 Greifswald, Germany. e-mail: birgit.schabinger@uni-greifswald.de
^b Present address: Institute for Quantum Electronics, ETH Zürich, Schafmattstr. 16, 8093 Zürich, Switzerland.

Received: 20 October 2011
Received in final form: 24 January 2012
Published online: 27 March 2012

Abstract

The g factor of the electron bound in hydrogenlike ²⁸Si¹³⁺ has been measured to 10 significant digits. The value agrees very well with bound-state quantum-electrodynamical calculations and represents to date the most stringent test of the theory. The experiment uses a single ion confined in a triple Penning trap. Here we present details of the setup, the experimental procedure and the data evaluation.