Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation
SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068
2 SPCTS, CEC, 12 Rue Atlantis, Ester Technopole, 87068 Limoges, France
a e-mail: email@example.com
Received in final form: 10 October 2011
Published online: 25 November 2011
SiOxHyCz nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiOxHyCz nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag 2011