https://doi.org/10.1140/epjd/e2011-10577-6
Regular Article
Systematic multi-configuration Dirac-Fock calculations of the Kα and Kβ X-ray spectra of silicon ions1
1
Institute of Atomic and Molecular Physics, Sichuan
University, Chengdu
610065, P.R.
China
2
The Key Laboratory of High Energy Density Physics and Technology,
Ministry of Education, Sichuan, Chengdu
610065, P.R.
China
a e-mail: wangxiaoflc@163.com
Received:
11
October
2010
Received in final form:
16
December
2010
Published online:
17
August
2011
The transition energies, absorption oscillator strengths, line strengths and transition probabilities between computed levels are reported for the He-like to Ne-like Silicon ion sequences. Wavefunctions were determined relativistic configuration interaction (RCI) and multi-configuration Dirac-Fock (MCDF) technique included the Breit interaction, quantum electrodynamic (QED) corrections and nuclear mass corrections. The calculated values are in good agreement with the available experimental data and the recent theoretical values obtained from other methods. These data provide reference values for the level lifetimes, charge state distributions, and average charge of silicon plasmas.
Tables 1-4 are only available in electronic format at www.epj.org
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag 2011