Eur. Phys. J. D 61, 717-724 (2011)
https://doi.org/10.1140/epjd/e2010-10455-9

Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field

¹ Department of Physics, Chaudhary Devi Lal University, 125055 Sirsa, India
² Department of Physics, Government Polytechnic for Women, 125055 Sirsa, India
³ Department of Physics, Kurukshetra University, 136119 Kurukshetra, India

Corresponding author: ^a vishu4up1181@gmail.com

Received: 14 August 2010
Revised: 9 November 2010
Published online: 18 February 2011

Abstract

A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 μm CO₂ laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B₀ = 14.1 T, the second-order susceptibility was found to be 3.4 × 10^-7 (SI unit) near the resonance condition.