https://doi.org/10.1140/epjd/e2010-00208-3
Geometric phase gate with trapped ions in thermal motion by adiabatic passage
1
Department of Physics, National University of Singapore, 2 Science Drive
3, Singapore, 117542, Singapore
2
Centre for Quantum Technologies, National University of Singapore, 3
Science Drive 2, Singapore, 117543, Singapore
3
Center for Modern Physics and Department of Physics, Chongqing
University, Chongqing, 400044, P.R. China
Corresponding author: a xlzhang168@gmail.com
Received:
17
January
2010
Revised:
30
May
2010
Published online:
2
August
2010
We propose a scheme for implementing two-qubit geometric phase gate via the adiabatic evolution for trapped ions in thermal motion, leveraging on the stimulated Raman adiabatic passage with the geometric phase mechanism. Evolution along a dark state makes our scheme not only immune from decoherence due to spontaneous emission from excited states, but also rid off the dynamical phase. Furthermore, due to the opposite detuning of the driving lasers, the vibrational states of the trapped ions are only virtually excited during the operations, so our scheme is also insensitive to the occupation number of the vibrational mode.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010
