Eur. Phys. J. D 60, 309-316 (2010)
https://doi.org/10.1140/epjd/e2010-00192-6

Extreme-ultraviolet emissivity from Xe⁸⁺ to Xe¹²⁺ by using a detailed line-by-line method

Department of Physics, College of Science, National University of Defense Technology, Changsha Hunan, 410073, P.R. China

Corresponding author: ^a jiaolongzeng@hotmail.com

Received: 17 December 2009
Revised: 4 May 2010
Published online: 27 July 2010

Abstract

A theoretical model has been developed to calculate the emissivity of low density xenon plasmas (from Xe⁸⁺ to Xe¹²⁺) by employing a detailed line accounting formalism. A complete set of atomic data such as transition probabilities for electric (magnetic) dipole and quadruple E1, E2, M1 and M2 and electron impact excitation collision strength, which is accurate to fine-structure level, was calculated using a full configuration interaction formalism and was used to solve the rate equation which determines the population of different levels. Detailed results are given for pure Xe¹⁰⁺ ion, which is essential for extreme-ultraviolet emission at 13.5 nm, and for low density plasmas (the electron density was taken to be 10¹² cm^-3) at temperatures of 30, 45, 55, 65 and 75 eV. The fraction of different ionization stages was obtained by a completely coupled rate equation from neutral atom to Xe²⁰⁺ by using a detailed configuration accounting method. The results show that the emissivity of the dipole forbidden lines of transition array 4s²4p⁶4d⁷5s 4s²4p⁶4d⁸ of Xe¹⁰⁺ is very sensitive to the temperature, which should be a useful tool to diagnose the temperature in EBIT plasmas.