Extreme-ultraviolet emissivity from Xe8+ to Xe12+ by using a detailed line-by-line method
Department of Physics, College of Science, National University of Defense Technology, Changsha Hunan, 410073, P.R. China
Corresponding author: a firstname.lastname@example.org
Revised: 4 May 2010
Published online: 27 July 2010
A theoretical model has been developed to calculate the emissivity of low density xenon plasmas (from Xe8+ to Xe12+) by employing a detailed line accounting formalism. A complete set of atomic data such as transition probabilities for electric (magnetic) dipole and quadruple E1, E2, M1 and M2 and electron impact excitation collision strength, which is accurate to fine-structure level, was calculated using a full configuration interaction formalism and was used to solve the rate equation which determines the population of different levels. Detailed results are given for pure Xe10+ ion, which is essential for extreme-ultraviolet emission at 13.5 nm, and for low density plasmas (the electron density was taken to be 1012 cm-3) at temperatures of 30, 45, 55, 65 and 75 eV. The fraction of different ionization stages was obtained by a completely coupled rate equation from neutral atom to Xe20+ by using a detailed configuration accounting method. The results show that the emissivity of the dipole forbidden lines of transition array 4s24p64d75s 4s24p64d8 of Xe10+ is very sensitive to the temperature, which should be a useful tool to diagnose the temperature in EBIT plasmas.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010