Management of the electrical injection uniformity in broad-area top-emitting VCSELs
CNRS, LAAS, 7 avenue du colonel Roche, 31077 Toulouse, France
2 Université de Toulouse, UPS, INSA, INP, ISAE, LAAS, 31077 Toulouse, France
Corresponding author: a firstname.lastname@example.org
Revised: 25 January 2010
Published online: 26 May 2010
The electrical properties of broad-area 850 nm top emitting VCSELs have been investigated in order to improve carrier injection uniformity in their active zone. First, we have demonstrated using an electrical simulation tool that a multi-point localized injection design associated with a spreading layer at the top of the device (ITO) can lead to a significant improvement of carrier injection and on its spatial distribution. Secondly, the electrical contrast achievable by applying this method with localized etchings has been experimentally measured. Finally, stripe-shaped devices with output power up to 50 mW in a continuous-wave operation at room temperature have been demonstrated.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010