Eur. Phys. J. D 59, 53-57 (2010)
https://doi.org/10.1140/epjd/e2010-00149-9

Management of the electrical injection uniformity in broad-area top-emitting VCSELs

¹ CNRS, LAAS, 7 avenue du colonel Roche, 31077 Toulouse, France
² Université de Toulouse, UPS, INSA, INP, ISAE, LAAS, 31077 Toulouse, France

Corresponding author: ^a almuneau@laas.fr

Received: 1 December 2009
Revised: 25 January 2010
Published online: 26 May 2010

Abstract

The electrical properties of broad-area 850 nm top emitting VCSELs have been investigated in order to improve carrier injection uniformity in their active zone. First, we have demonstrated using an electrical simulation tool that a multi-point localized injection design associated with a spreading layer at the top of the device (ITO) can lead to a significant improvement of carrier injection and on its spatial distribution. Secondly, the electrical contrast achievable by applying this method with localized etchings has been experimentally measured. Finally, stripe-shaped devices with output power up to 50 mW in a continuous-wave operation at room temperature have been demonstrated.