Eur. Phys. J. D 58, 167-174 (2010)
https://doi.org/10.1140/epjd/e2010-00041-8

Nonlinear dynamics of doped semiconductor quantum dot lasers

Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

Corresponding author: luedge@physik.tu-berlin.de

Received: 4 December 2009
Revised: 8 February 2010
Published online: 2 March 2010

Abstract

We discuss the influence of wetting layer doping on the turn-on dynamics of a quantum dot (QD) laser by using a microscopically based rate equation model which separately treats the dynamics of electrons and holes. As the carrier-carrier scattering rates depend nonlinearly on the wetting layer carrier densities we observe drastic changes of relaxation oscillation frequency and damping if the wetting layer is doped. We gain insight into the nonlinear dynamics of the QD laser by a detailed analysis of various sections of the five-dimensional phase space focusing on changes in the coupling between QD electron and holes dynamics.