Small InAsN and InN clusters: electronic properties and nitrogen stability belt
University of Idaho, Department of Physics, Moscow, ID, 83844, USA
Corresponding author: firstname.lastname@example.org
Revised: 15 February 2010
Published online: 16 March 2010
Electronic properties of several small non-stoichiometric InAsN and InN clusters derived from the symmetry elements of the zincblende InAs and wurtzite InN bulk lattices have been studied by the first-principle, many-body field theoretical methods. Clusters' nucleation conditions reflected those in quantum confinement and “vacuum”. Electronic properties of such clusters can be tuned both by the use of quantum confinement and doping, which provide for symmetry breaking and realization of excitations optically forbidden in tetrahedral and hexagonal symmetry clusters. Doping with nitrogen enhances stability and allows tailoring the optical transition energy of the clusters from ultraviolet to infrared. The obtained results closely correlate with available experimental data.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2010