https://doi.org/10.1140/epjd/e2009-00266-6
Correlations between antibunching and blinking of photoluminescence from a single CdSe quantum dot
1
Kobe Advanced Research Center, National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-Ku, Kobe, 651-2492, Japan
2
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P.R. China
3
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga-city, Fukuoka, 816-8580, Japan
Corresponding author: a xsxu@red.semi.ac.cn
Received:
13
September
2008
Revised:
2
March
2009
Published online:
6
November
2009
The antibunching and blinking from a single CdSe/ZnS nanocrystal with an emission wavelength of 655 nm were investigated under different excitation powers. The decay process of the photoluminescence from nanocrystal was fitted into a stretched exponential, and the small lifetime and the small stretching exponent under a high excitation power were explained by using nonradiative multi-channel model. The probability of distributions for off-times from photoluminescence intermittence was fitted into the power law, and the power exponents were explained by using a tunneling model. For higher excitation power, the Auger-assisted tunneling model takes effect, where the tunneling rate increases and the observed lifetime decreases. For weak excitation power, the electron directly tunnels between the nanocrystal and trapping state without Auger assistance. The correlation between antibunching and blinking from the same nanocrystal was analyzed.
PACS: 78.67.Hc – Quantum dots / 42.50.-p – Quantum optics / 78.47.-p – Spectroscopy of solid state dynamics / 79.60.Bm – Clean metal, semiconductor, and insulator surfaces
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2009