https://doi.org/10.1140/epjd/e2006-00250-8
Toffoli gate made from a single resonant interaction with a trapped ion system
1
Department of Physics and Information Engineering, Hunan Institute of Humanities, Science and Technology, Loudi, 417000, P.R. China
2
State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathmatics, Chinese Academy of Sciences, Wuhan, 430071, P.R. China
3
Department of Information and Controlling Engineering, Hunan Institute of Humanities, Science and Technology, Loudi, 417000, P.R. China
Corresponding author: a chenchangyong_64@hotmail.com
Received:
9
February
2006
Revised:
12
July
2006
Published online:
15
November
2006
We propose a simple but practical scheme to implement a three-qubit Toffoli gate by a single resonant interaction in a trapped ion system. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the phase gate can be implemented by only a single resonant interaction of the trapped ions with the first lower vibrational sideband mode. Both the situations, with and without spontaneous ionic emission, are investigated. Discussions are made for the advantages and the experimental feasibility of our scheme.
PACS: 03.67.-a – Quantum information / 42.50.Dv – Nonclassical states of the electromagnetic field, including entangled photon states; quantum state engineering and measurements / 14.90.+l – Quantum computation with limited local control
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2006
