Realizing a stable magnetic double-well potential on an atom chip
Laboratoire Charles Fabry de l'Institut d'Optique, UMR
8501 du CNRS, 91403 Orsay Cedex, France
Corresponding author: a email@example.com
Published online: 26 July 2005
We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.
PACS: 39.20.+q – Atom interferometry techniques / 03.75.Lm – Tunneling, Josephson effect, Bose-Einstein condensates in periodic potentials, solitons, vortices and topological excitations
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005