Morphology evolution of Si nanowires synthesized by gas condensation of SiO without any catalyst
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. China
2 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Corresponding author: a email@example.com
Published online: 13 July 2005
A series of Si nanowires are synthesized at constant temperature of 970 C on Si substrate by gas condensation of pure SiO vapor without any metal catalysts, by controlling the coverage of SiOx deposits. The morphologies are characterized by scan electron microscopy (SEM) and their evolution during the growth process is observed: from isolated clusters in earlier stage to linked cluster assemblies, and developing to smooth nanowires in the later stage. The growth mechanism is discussed based on the newly proposed clustering-aggregation-sintering model.
PACS: 68.65.-k – Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005