Eur. Phys. J. D 33, 335-342 (2005)
https://doi.org/10.1140/epjd/e2005-00069-9

The electron affinities of O, Si, and S revisited with the photodetachment microscope

Laboratoire Aimé-Cotton (URL: ) , Centre national de la recherche scientifique, bâtiment 505, 91405 Orsay Cedex, France

Corresponding author: ^a christophe.blondel@lac.u-psud.fr

Received: 31 January 2005
Revised: 30 March 2005
Published online: 12 May 2005

Abstract

Photodetachment microscopy has been performed on a beam of ions. Analysing the electron images obtained, we find that the electron affinity measurements performed with the photodetachment microscope contain a small bias, due to the difference between the actual and assumed values of the applied electric field. Having a measure of this bias, we can reanalyse older data recorded on the negative ions O^- and Si^- along similar lines. As a consequence, the values of the electron affinities of Oxygen, Silicon and Sulfur can be given with an improved accuracy. The recommended values (with expanded uncertainties) are now for ¹⁶O, for ²⁸Si, and for ³²S, i.e. 1.461 113 5(12), 1.389 521 3(13) and 2.077 104 0(9) eV, respectively.