https://doi.org/10.1140/epjd/e2005-00069-9
The electron affinities of O, Si, and S revisited with the photodetachment microscope
Laboratoire Aimé-Cotton (URL: ) , Centre national de la recherche scientifique,
bâtiment 505, 91405 Orsay Cedex, France
Corresponding author: a christophe.blondel@lac.u-psud.fr
Received:
31
January
2005
Revised:
30
March
2005
Published online:
12
May
2005
Photodetachment microscopy has been performed on a beam of 
ions. Analysing the electron images obtained, we find that the electron affinity measurements performed with the photodetachment microscope contain a small bias, due to the difference between the actual and assumed values of the applied electric field. Having a measure of this bias, we can reanalyse older data recorded on the negative ions O- and Si- along similar lines. As a consequence, the values of the electron affinities of Oxygen, Silicon and Sulfur can be given with an improved accuracy. The recommended values (with expanded uncertainties) are now 
for 16O, 
for 28Si, and 
for 32S, i.e. 1.461 113 5(12), 1.389 521 3(13) and 2.077 104 0(9) eV, respectively.
PACS: 32.80.Gc – Photodetachment of atomic negative ions / 03.75.-b – Matter waves / 07.78.+s – Electron, positron, and ion microscopes; electron diffractometers / 32.10.Hq – Ionization potentials, electron affinities
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005
