https://doi.org/10.1140/epjd/e2003-00162-1
Photoemission study of size selected InP nanocrystals: the relationship between luminescence yield and surface structure
1
HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany
2
Institute of Physical Chemistry, University of Hamburg, Bundesstr. 45, 20146 Hamburg, Germany
Received:
10
September
2002
Published online:
3
July
2003
The surfaces of luminescent InP nanocrystals were investigated by photoelectron spectroscopy (PES) technique with synchrotron
radiation. Semiconductor samples were prepared by an organometallic approach using trioctylphosphine (TOP) and trioctylphosphine
oxide (TOPO) as stabilizing and size regulating agents. As prepared, InP nanocrystals exhibit poor photoluminescence (PL) yield,
usually less than 1%. However the yield can be drastically enhanced to about 
% by photoetching of the nanoparticle surface with
fluorine compounds. High resolution In 3d and P 2p core level spectra of etched and non-etched particles taken at different excitation
energy reveal changes of the nanocrystal surface. Three different InP samples are analyzed and a simple model for the etching process
is discussed.
PACS: 79.60.Jv – Interfaces; heterostructures; nanostructures / 78.55.Cr – III-V semiconductors
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003
