Effect of ion irradiation on C60 thin films
Ion-irradiation-induced resistance to photopolymerization
Takasaki Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, Japan
2 Gunma Prefectural Industrial Technology Research Laboratory, 190 Toriba-machi, Maebashi, Gunma 371-0845, Japan
Published online: 3 July 2003
We report a new effect of ion irradiation on C60 thin films: C60 thin films irradiated with 7-MeV C2+ ions show resistance to photopolymerization. The resistance increases with increasing ion fluence of irradiation. The effect is qualitatively explained by the fact that the number of a C60 pair satisfying the topochemical requirement for photochemical reaction in solids decreases by destruction of C60 molecules accompanied by lattice disorder.
PACS: 61.48.+c – Fullerenes and fullerene-related materials / 61.80.Jh – Ion radiation effects / 82.35.-x – Polymers: properties; reactions; polymerization
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003