Effect of ion irradiation on C60 thin films

K. Narumi; Y. Xu; K. Miyashita; H. Naramoto

doi:10.1140/epjd/e2003-00150-5

EPJ

Effect of ion irradiation on C₆₀ thin films

Ion-irradiation-induced resistance to photopolymerization

K. Narumi¹, Y. Xu¹, K. Miyashita² and H. Naramoto¹

¹ Takasaki Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, Japan
² Gunma Prefectural Industrial Technology Research Laboratory, 190 Toriba-machi, Maebashi, Gunma 371-0845, Japan

Received: 10 September 2002
Published online: 3 July 2003

Abstract

We report a new effect of ion irradiation on C₆₀ thin films: C₆₀ thin films irradiated with 7-MeV C²⁺ ions show resistance to photopolymerization. The resistance increases with increasing ion fluence of irradiation. The effect is qualitatively explained by the fact that the number of a C₆₀ pair satisfying the topochemical requirement for photochemical reaction in solids decreases by destruction of C₆₀ molecules accompanied by lattice disorder.

PACS: 61.48.+c – Fullerenes and fullerene-related materials / 61.80.Jh – Ion radiation effects / 82.35.-x – Polymers: properties; reactions; polymerization

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