Magnetic field dependence of electronic structures in a single and double quantum dots by 3D-MHFKS calculation
Faculty of Textile Science and Technology, Shinshu University, Ueda,
Nagano 386-8567, Japan
Corresponding author: a email@example.com
Published online: 3 July 2003
The 3-dimensional Mesh-Hartree-Fock-Kohn-Sham (3D-MHFKS) calculation is applied to study the magnetic (B-) field dependence of the electronic structures of circular-shaped vertical quantum dot (Q-dot) with electron number (N) in double barrier structure (DBS) and also coupled double Q-dots in triple barrier structure (TBS). One of the advantageous points of the 3D-MHFKS calculation is that the strength of coupling between two dots are explicitly evaluated by introducing the realistic barrier in TBS as a straightforward extension of 3D-MHFKS calculation of the single Q-dot in DBS. The calculated chemical potentials represented in B–N phase diagram are consistently and systematically discussed by showing the B-field dependence of the occupied single particle energy levels from the view point how the electronic states transfer sequentially from Fock-Darwin (FD) to lowest Landau (LL) and from LL to the spin flip (SF) and from SF to spin-polarized maximum density droplet (MDD) domains as increasing B-field in the Q-dots.
PACS: 73.20.-r – Electron states at surfaces and interfaces
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2003