https://doi.org/10.1007/s100530170128
Transport properties of a nanotube-based transistor
1
IMR, Tohoku University, Sendai 980-8577 Japan
2
NIMC, Tsukuba, Ibaraki 305-8565 Japan
3
Shahid Beheshti University, Evin, Teheran, Iran
Corresponding author: a k1@sharif.edu
Received:
30
November
2000
Published online: 15 September 2001
Transport properties of doped nanotube-based double junctions forming a nanotransistor are investigated within the tight binding formalism. The effects of doping, gate length and gate-source hopping have been considered. It is found that in addition to the importance of rotational symmetry in determining transport properties, large gains can be achieved for semiconducting doped tubes.
PACS: 72.20.-i – Conductivity phenomena in semiconductors and insulators / 71.20.Tx – Fullerenes and related materials; intercalation compounds
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2001
