https://doi.org/10.1007/s100530050049
Temperature behaviour of optical properties of Si+-implanted SiO2
1
Charles University Prague, Faculty of Mathematics and Physics,
Department of Chemical Physics and Optics,
Ke Karlovu 3, 12116 Prague, Czech
Republic
2
Institute of Physics, Academy of Sciences of the Czech Republic,
Cukrovarnická 10, 16253 Prague, Czech Republic
3
Laboratoire PHASE (UPR 292 du CNRS) , 23 rue du Loess, 67037 Strasbourg, France
4
IPCMS, Groupe des matériaux inorganiques (UMR 7504 du CNRS) , UPL, 23 rue du
Loess, 67037 Strasbourg, France
5
IPCMS, Groupe d'optique non linéaire et d'optoélectronique, 23 rue du Loess, 67037
Strasbourg, France
Received:
1
September
1998
Revised:
7
September
1999
Published online: 15 March 2000
Silicon nanocrystals were prepared by Si+-ion implantation and subsequent
annealing of SiO2 films thermally grown on a c-Si wafer. Different implantation
energies (20-150 keV) and doses 
- 
cm
were used
in order to achieve flat implantation profiles (through the thickness of about 100 nm)
with a peak concentration of Si atoms of 5, 7, 10 and 15 atomic% . The presence of
Si nanocrystals was verified by transmission electron microscopy. The samples
exhibit strong visible/IR photoluminescence (PL) with decay time of the order of
tens of μs at room temperature. The changes of PL in the range 70-300 K can be
well explained by the exciton singlet-triplet splitting model. We show that all
PL characteristics (efficiency, dynamics, temperature dependence, excitation
spectra) of our Si+-implanted SiO2 films bear close resemblance to those of a
light-emitting porous Si and therefore we suppose similar PL origin in both
materials.
PACS: 78.55.Hx – Other solid inorganic materials / 61.46.+w – Clusters, nanoparticles, and nanocrystalline materials / 78.45.+h – Stimulated emission
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2000
