https://doi.org/10.1007/s100530050361
Dielectronic recombination rate coefficients of Ni-like barium and tungsten
Racah Institute of Physics, The Hebrew University, 91904 Jerusalem, Israel
Received:
1
February
1999
Published online: 15 September 1999
Ab initio calculations of the total dielectronic recombination
(DR) rate coefficient of Ni-like barium () and tungsten (
) in the
ground state have been performed using the HULLAC atomic code package. Resonant
and nonresonant stabilizing radiative transitions are included. Collisional
transitions following electron capture are neglected. The present level-by-level
calculations include the DR contributions of all of the levels (over 17000)
in the Cu-like inner-shell excited configurations
(
),
(
), and
(
). For both ions, the configuration
complexes with a hole in the 3p inner shell contribute almost 10% to the total DR rate coefficient,
while the complexes with a hole in the 3s inner shell contribute about 1%.
The converging contributions of the
(n' > 9) configurations
are evaluated by applying the complex-by-complex
extrapolation
method and are found to comprise up to about 20% of the total DR rate coefficients
throughout a wide electron temperature range. The total DR rate coefficients
are fitted to an easy-to-use analytic expression which reproduces the original
data with an accuracy of about 2% or better in a very wide temperature range.
PACS: 34.80.Lx – Electronion recombination and electron attachment
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999