Effect of exciton dephasing in a semiconductor microcavity
Dipartimento di Fisica and INFM, Via Celoria 16, 20133 Milano, Italy
2 France Telecom/CNET, Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220 Bagneux, France
Published online: 15 July 1999
We study the interaction between delocalized excitons in a semiconductor quantum well and a longitudinal mode of the radiation field in a semiconductor microcavity with Bragg mirrors. The drastic enhancement of the spontaneous emission rate, that occurs under strong coupling conditions, is found to be surprisingly robust with respect to incoherent processes leading to dephasing of the exciton mode.
PACS: 42.55.Sa – Microcavity and microdisk lasers / 42.50.Md – Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 1999