Eur. Phys. J. D 38, 143-149 (2006)
https://doi.org/10.1140/epjd/e2006-00044-0

Stochastic model applied to plasma-surface interaction's simulation

M.V. Keldysh institute of applied mathematics, Moscow, Russia

Corresponding author: ^a bal@spp.keldysh.ru

Received: 2 August 2005
Revised: 12 December 2005
Published online: 15 March 2006

Abstract

The kinetic approach of the nonequilibrium distribution functions (contrasted with the both sizes and coordinates) were calculated for liquid thin film islands as well as for gaseous-vacancy defects into lattice (blisters). The model based on Ito-Stratonovich stochastic differential equations solution, was applied to the defects migration and to defects fluctuation stage of cluster formation. The material porosity and lattice strain values were estimated. Computer simulation results such as surface damaging, the structural and phase alternation of state surface transformation can be compared with experiments of impact powerful pulse plasma fluxes of nano- and micro-second duration ionizing radiation.